s m d ty p e w w w . k e x i n . c o m . c n 1 mosf e t p-cha nne l enha nc e m e nt mosfet feat ur es v d s ( v ) = - 20v r d s ( o n ) 130m ( v g s = - 4.5v ) r d s ( o n ) 190m ( v g s = - 2.5v ) a bs olut e max imum r at ings ta = 25 g s d 2 3 1 s i2 3 0 1 ds ( k i 2 3 01ds) p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s - 20 g ate- s our c e v ol tage v g s 8 conti nuous dr ai n cur r ent * 1 t a= 25 - 2.3 t a= 70 - 1.5 p ul s ed dr ai n cur r ent * 2 i d m - 10 p ow er di s s i pati on * 1 t a= 25 1.25 t a= 70 0.8 t her m al res i s tanc e.j unc ti on- to- a m bi ent * 1 100 t her m al res i s tanc e.j unc ti on- to- a m bi ent * 3 166 j unc ti on t em per atur e t j 150 s tor age t em per atur e range t st g - 55 to 150 * 1 s ur fac e m ounted on f r4 b oar d, t 5 s ec . * 2 p ul s e w i dth l i m i ted by m ax i m um j unc ti on tem per atur e. * 3 s ur fac e m ounted on f r4 b oar d. r t h ja i d p d a v /w w 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t p-cha nne l enha nc e m e nt mo s f e t e lec t r ic al c har ac t er is t ic s ta = 25 s i2 3 0 1 ds ( k i 2 3 0 1 d s ) p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 20 v v d s = - 20v , v g s = 0v - 1 v d s = - 20v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 0.45 - 1 v v g s = - 4.5v , i d = - 2.8a 105 130 v g s = - 2.5v , i d = - 2.0a 145 190 v g s = - 4.5v , v d s - 5v - 6 v g s = - 2.5v , v d s - 5v - 3 f or w ar d t r ans c onduc tanc e * 1 g fs v d s = - 5v , i d = - 2.8a 6.5 s input capac i tanc e c i ss 415 o utput capac i tanc e c o ss 223 rev er s e t r ans fer capac i tanc e c r ss 87 t otal g ate char ge q g 5.8 10 g ate s our c e char ge q g s 0.85 g ate dr ai n char ge q g d 1.7 t ur n- o n del ay t i m e t d ( o n ) 13 25 t ur n- o n ri s e t i m e t r v g e n = - 4.5v , v d s = - 6v , r l = 6 ,r g = 6 36 60 t ur n- o ff del ay t i m e t d ( o f f ) i d = 1.0a * 3 42 70 t ur n- o ff f al l t i m e t f 34 60 conti nuous s our c e cur r ent ( di ode conduc ti o n) * 1 is - 1.6 a di ode f or w ar d v ol tage v s d i s = - 1.6a ,v g s = 0v - 0.8 - 1.2 v v g s = 0v , v d s = - 6v , f= 1m hz * 2 v g s = - 4.5v , v d s = - 6v , i d = - 2.8a * 2 o n s tate dr ai n c ur r ent * 1 i d ( o n ) pf nc ns z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e * 1 a * 1 p ul s e tes t: p w 300u s duty c y c l e 2% . * 2 f or de s ig n a id o nly , not s ubj ec t to pr oduc ti on tes ti ng. * 3 s w i tc hi ng ti m e i s es s enti al l y i ndependent of oper ati ng tem per atur e. mar k ing m ar k i ng a 1*
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t p-cha nne l enha nc e m e nt mo s f e t ty pic al c har ac t er is it ic s on-resistanc e v s . d r a i n c u r r e n t s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s - dr a i n - t o - s o u r c e v o l t a g e ( v ) - d r a i n cu r r e n t ( a ) i d v g s - g a t e - t o - s o u r c e v o l t a g e ( v ) - d r a i n c u r r e n t ( a ) i d 0 2 4 6 8 10 0 1 2 3 4 5 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = - 55 c 125 c 0 , 0 . 5 , 1 v 2 . 5 v v g s = 5 , 4 . 5 , 4 , 3 . 5 , 3 v 1 . 5 v 2 v 0 200 400 600 800 1000 0 3 6 9 12 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 0 50 100 150 0 1 2 3 4 5 0 2 4 6 8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 g a t e c h a r g e - g a t e - t o - s o u r c e v o l t a g e ( v ) q - t o t a l g a t e c h a r g e ( n c ) v d s - dr a i n - t o - s o u r c e v o l t a g e ( v ) c - ca pac ita nc e (p f ) v gs c r s s c o s s c i s s v d s = 6 v i d = 2 . 8 a - on-resistance ( r ds(on) ) i d - d r a i n cu r r e n t ( a ) capacitance o n - r e s i s t a n c e v s . j u n c t i o n t emperature v g s = 4 . 5 v i d = 2 . 8 a t j - j u n ct i o n t em p e r a t u r e ( c) (normalized) - on-resistance ( r ds(on) ) v g s = 2 . 5 v v g s = 4 . 5 v 25 c s i2 3 0 1 ds ( k i 2 3 0 1 d s ) b
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . p-cha nne l enha nc e m e nt mo s f e t ty pic al c har ac t er is it ic s 0.01 0.10 1.00 10.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 p o w e r ( w ) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 0 50 100 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 source-drai n diod e f orwar d v oltage o n-res i s t a n c e vs. g a t e - t o - s ou r c e v oltage t hre s hol d v oltage s ingl e p u l s e p o w e r n o r m a l i z e d t h er m a l t r a n s i e n t i m p e d a n c e , j u n c t i o n - t o - a m b i e n t s qu a r e w av e pu l se dur a t io n ( se c ) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normal i z e d e f f e c t i v e t ransient t herma l i mpeda n c e 30 - on-resistance ( r ds(on) ) v s d v ) v ( e g a t l o v n i a r d - o t - e c r u o s - g s - g a t e - t o - s ou r c e v o l t a g e ( v ) - s ou r ce curre n t ( a ) i s t j - t emper a t ur e ( c) t ime (sec) v ari a n c e ( v ) v gs(th) 0.2 0.1 0.05 0.02 s i n g l e p u l s e dut y c yc le = 0 . 5 i d = 2 . 8 a i d = 2 5 0 a 10 1 10 t c = 2 5 c s i n g l e p u l s e 14 12 8 4 0 t j = 2 5 c t j = 1 5 0 c 2 6 10 s i2 3 0 1 ds ( k i 2 3 0 1 d s )
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